SiC-MOSFET

Third Generation Semiconductor Materials

As the technology improved, recently for the solid state high frequency welder adopts third generation semiconductor material called SiC-MOSFET.

The Third Generation Semiconductor Materials SiC-MOSFET Performance Characteristics

1. High temperature and high pressure resistance: SiC has a wide band gap about 3 times that of Si, so it can realize power devices that can operate stably even under high temperature conditions. The insulation breakdown field strength of SiC is 10 times that of Si, so it is possible to fabricate high-voltage power devices with a higher doping concentration and a thinner film thickness drift layer compared to Si devices.

2. Device miniaturization and lightweight: Silicon carbide devices have higher thermal conductivity and power density, which can simplify the heat dissipation system, so as to achieve device miniaturization and lightweight.

3. Low loss and high frequency: The working frequency of silicon carbide devices can reach 10 times that of silicon-based devices, and the efficiency does not decrease with the increase of working frequency, which can reduce the energy loss by nearly 50%; At the same time, due to the increase of frequency, the volume of peripheral components such as inductance and transformers is reduced, and the volume and other components cost after the composition of the system are reduced.

SiC-MOSFET